1 http://www.fujielectric.com/products/semiconductor/ 2MBI450VN-170-50 igbt modules igbt module (v series) 1700v / 450a / 2 in one package features high speed switching voltage drive low inductance module structure applications inverter for motor drive ac and dc servo drive amplifer uninterruptible power supply industrial machines, such as welding machines maximum ratings and characteristics absolute maximum ratings (at t c =25c unless otherwise specifed) items symbols conditions maximum ratings units inverter collector-emitter voltage v ces 1700 v gate-emitter voltage v ges 20 v collector current i c continuous t c =25c 600 a t c =100c 450 i c pulse 1ms 900 -i c 450 -i c pulse 1ms 900 collector power dissipation p c 1 device 2500 w junction temperature t j 175 c operating junction temperature (under switching conditions) t jop 150 storage temperature t stg -40 ~ 125 isolation voltage between terminal and copper base (*1) v iso ac : 1min. 3400 vac between thermistor and others (*2) screw torque mounting (*3) - 3.5 n m terminals (*4) - 4.5 note *1: all terminals should be connected together during the test. note *2: two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. note *3: recommendable value : 2.5-3.5 nm (m5) note *4: recommendable value : 3.5-4.5 nm (m6) electrical characteristics (at t j = 25c unless otherwise specifed) items symbols conditions characteristics units min. typ. max. inverter zero gate voltage collector current i ces v ge = 0v, v ce = 1700v - - 3.0 ma gate-emitter leakage current i ges v ce = 0v, v ge = 20v - - 600 na gate-emitter threshold voltage v ge (th) v ce = 20v, i c = 450ma 6.0 6.5 7.0 v collector-emitter saturation voltage v ce (sat) (terminal) v ge = 15v i c = 450a t j =25c - 2.65 3.10 v t j =125c - 3.10 - t j =150c - 3.15 - v ce (sat) (chip) t j =25c - 2.00 2.45 t j =125c - 2.45 - t j =150c - 2.50 - internal gate resistance r g (int) - - 1.67 - input capacitance c ies v ce = 10v, v ge = 0v, f = 1mhz - 40 - nf turn-on time t on v cc = 900v i c = 450a v ge = 15v r g = 3.3? l s = 80nh - 900 - nsec t r - 400 - t r (i) - 100 - turn-off time t off - 1300 - t f - 100 - forward on voltage v f (terminal) v ge = 0v i f = 450a t j =25c - 2.45 2.90 v t j =125c - 2.75 - t j =150c - 2.70 - v f (chip) t j =25c - 1.80 2.25 t j =125c - 2.10 - t j =150c - 2.05 - reverse recovery time t rr i f = 450a - 250 - nsec thermistor resistance r t = 25c - 5000 - t = 100c 465 495 520 b value b t = 25/50c 3305 3375 3450 k thermal resistance characteristics items symbols conditions characteristics units min. typ. max. thermal resistance(1device) r th(j-c) inverter igbt - - 0.06 c/w inverter fwd - - 0.10 contact thermal resistance (1device) (*5) r th(c-f) with thermal compound - 0.0167 - note *5: this is the value which is defned mounting on the additional cooling fn with thermal compound.
2 igbt modules 2MBI450VN-170-50 http://www.fujielectric.com/products/semiconductor/ 3 characteristics (representative) 1 10 100 1000 0 10 20 30 c ies c res c oes 0 200 400 600 800 1000 0 1 2 3 4 5 v ge =20v 15v 12v 10v 8v 0 200 400 600 800 1000 0 1 2 3 4 5 v ge = 20v 12v 15v 10v 8v 0 200 400 600 800 1000 0 1 2 3 4 5 t j = 25 c 150c 125c 0 2 4 6 8 10 5 10 15 20 25 i c =900a i c =450a i c =225a -20 -15 -10 -5 0 5 10 15 20 -5000 -3000 -1000 1000 3000 5000 -1000 -750 -500 -250 0 250 500 750 1000 v ge v ce collector current vs. collector-emitter voltage (typ.) t j = 150c / chip collector-emitter voltage vs. gate-emitter voltage (typ.) t j = 25c / chip collector current vs. collector-emitter voltage (typ.) t j = 25c / chip collector current vs. collector-emitter voltage (typ.) v cc =900v, i c =450a, t j = 25c gate capacitance vs. collector-emitter voltage (typ.) dynamic gate charge (typ.) v ge = 0v, ?= 1mhz, t j = 25c v ge = 15v / chip collector-emitter voltage: v ce [v] co ll e c t or curren t: i c [ a ] gate-emitter voltage: v ge [v] co ll e c t or- e m i tt er v o l t age : v ce [ v ] collector-emitter voltage: v ce [v] c o ll e ct o r c u rr en t: i c [a ] collector-emitter voltage: v ce [v] c o ll e ct o r c u rr en t: i c [a ] collector-emitter voltage: v ce [v] ga t e capa c i t an c e : c ies , c oes , c res [ nf ] gate charge: q g [c] g a t e - e m i tt e r v o l t age : v ge [ v ] co ll e c t or- e m i tt er v o l t age : v ce [ v ] [inverter] [inverter] [inverter] [inverter] [inverter] [inverter]
2 3 igbt modules 2MBI450VN-170-50 http://www.fujielectric.com/products/semiconductor/ 10 100 1000 10000 0 200 400 600 800 1000 t f t r t off t on 10 100 1000 10000 0 200 400 600 800 1000 t f t r t off t on t j =125 o c t j =150 o c 10 100 1000 10000 1 10 100 t f t j =125 o c t j =150 o c t r t off t on 0 100 200 300 400 0 200 400 600 800 1000 e on e off e rr t j =125 o c t j =150 o c 0 100 200 300 400 500 600 1 10 100 e off e rr e on tj=125 o c tj=150 o c 0 200 400 600 800 1000 1200 0 500 1000 1500 2000 notice) switching characteristics of v ce is defined between sense c and sense e1 for upper arm and sense e1 and sense e2 for lower arm . reverse bias safe operating area (max.) switching time vs. collector current (typ.) v cc =900v, v ge =15v, r g =3.3?, t j =25c switching loss vs. collector current (typ.) switching time vs. gate resistance (typ.) v cc =900v, i c =450a, v ge =15v, t j =125c, 150c switching time vs. collector current (typ.) v cc =900v, v ge =15v, r g =3.3?, t j =125c, 150c +v ge =15v, -v ge =15v, r g =3.3?, t j =150c v cc =900v, v ge =15v, r g =3.3?, t j =125c, 150c v cc =900v, i c =450a, v ge =15v, t j =125, 150c switching loss vs. gate resistance (typ.) collector current: i c [a] s w itc h i ng tim e : t on , t r , t off , t f [ n s e c ] gate resistance: r g [?] s w itc h i ng tim e : t on , t r , t off , t f [ n s e c ] collector-emitter voltage: v ce [v] c o ll e ct o r c u rr en t: i c [a ] gate resistance: r g [?] s w i tc h i ng l o s s: e on , e off , e rr [ m j/ pu l s e ] collector current: i c [a] s w i t c h i ng l o s s: e on , e off , e rr [ m j/ pu l s e ] collector current: i c [a] s w itc h i ng tim e : t on , t r , t off , t f [ n s e c ] [inverter] [inverter] [inverter] [inverter] [inverter] [inverter]
4 igbt modules 2MBI450VN-170-50 http://www.fujielectric.com/products/semiconductor/ 5 0 200 400 600 800 1000 0 1 2 3 4 125c t j =25c 150c 10 100 1000 0 200 400 600 800 1000 i rr t rr 0.001 0.01 0.1 1 0.001 0.01 0.1 1 fwd igbt [ s e c] 0 . 00 2 3 0 . 0 3 0 1 0 . 0 59 8 0 . 07 0 8 r t h ig bt 0 . 0 0 64 4 0 . 0 16 3 2 0 . 02 3 0 5 0 . 0 1 42 0 [ c / w ] f w d 0 . 0 1 07 3 0 . 0 27 1 9 0 . 03 8 4 2 0 . 0 2 36 6 0.1 1 10 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 10 100 1000 0 200 400 600 800 1000 i rr t rr t j =125 o c t j =150 o c 0 200 400 600 800 1000 0 500 1000 1500 2000 pmax=562kw notice) switching characteristics of v ce is defined between sense c and sense e1 for upper arm and sense e1 and sense e2 for lower arm . v cc =900v, v ge =15v, r g =3.3?, t j =125c, 150c transient thermal resistance (max.) reverse recovery characteristics (typ.) v cc =900v, v ge =15v, r g =3.3?, t j =25c forward current vs. forward voltage (typ.) chip reverse recovery characteristics (typ.) forward current: i f [a] r e v er s e re c o v er y c urren t : i rr [a ] r e v e r s e r e c o v e r y t i m e : t rr [ n s e c ] pulse width : p w [sec] t her m a l re s i s t an s e : r th(j-c) [ c / w ] r e v e rs e re c o v e ry c u rr en t: i rr [ a] forward on voltage: v f [v] f o r wa r d c u rr en t: i f [ a ] forward current: i f [a] r e v e r s e r e c o v e r y c u rr en t: i rr [a ] r e v e r s e r e c o v e r y t i m e : t rr [ n s e c ] temperature characteristic (typ.) temperature [c] fwd safe operating area (max.) t j =150c collector-emitter voltage: v ce [v] r e s is t an c e : r [ k?] [inverter] [inverter] [inverter] [thermistor]
4 5 igbt modules 2MBI450VN-170-50 http://www.fujielectric.com/products/semiconductor/ [ inverter ] [ thermistor ] n p c g 1 e 1 g 2 e 2 o u t t 1 t 2 n p c g 1 e 1 g 2 e 2 o u t t 1 t 2 (2) (3, 4) (1) p n ou t weight: 300g (typ.) outline drawings, mm equivalent circuit schematic
6 igbt modules 2MBI450VN-170-50 http://www.fujielectric.com/products/semiconductor/ warning 1. this catalog contains the product specifcations, characteristics, data, materials, and structures as of may 2011. the contents are subject to change without notice for specifcation changes or other reasons. when using a product listed in this catalog, be sur to obtain the latest specifcations. 2. all applications described in this catalog exemplify the use of fuji's products for your reference only. no right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by fuji electric co., ltd. is (or shall be deemed) granted. fuji electric co., ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. although fuji electric co., ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. when using fuji electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fre, or other problem if any of the products become faulty. it is recommended to make your design failsafe, fame retardant, and free of malfunction. 4. the products introduced in this catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. ? computers ? oa equipment ? communications equipment (terminal devices) ? measurement equipment ? machine tools ? audiovisual equipment ? electrical home appliances ? personal equipment ? industrial robots etc. 5. if you need to use a product in this catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact fuji electric co., ltd. to obtain prior approval. when using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a fuji's product incorporated in the equipment becomes faulty. ? transportation equipment (mounted on cars and ships) ? trunk communications equipment ? traffc-signal control equipment ? gas leakage detectors with an auto-shut-off feature ? emergency equipment for responding to disasters and anti-burglary devices ? safety devices ? medical equipment 6. do not use products in this catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). ? space equipment ? aeronautic equipment ? nuclear control equipment ? submarine repeater equipment 7. copyright ?1996-2011 by fuji electric co., ltd. all rights reserved. no part of this catalog may be reproduced in any form or by any means without the express permission of fuji electric co., ltd. 8. if you have any question about any portion in this catalog, ask fuji electric co., ltd. or its sales agents before using the product. neither fuji electric co., ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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